Continuous hot-wire chemical vapor deposition on moving glass substrates
نویسندگان
چکیده
منابع مشابه
Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates
We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition HWCVD . Using Raman spectroscopy, spectroscopic ellipsometry, and atomic force microscopy, we find the relationship between surface roughness evolution and i the substrate temperature 230–350 °C and ii the hydrogen dilution ratio H2/SiH4=0–4...
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We investigate low-temperature epitaxial growth of thin silicon films by HWCVD on Si w1 0 0x substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300-nm thick epitaxial layers at 300 8C on silicon w1 0 0x substrates using a high H :SiH ratio of 70:1. Transmission electron microscopy confirms that the 2 4 films are epitaxial...
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Hot-wire chemical vapor deposition is a promising technique for deposition of thin amorphous, polycrystalline, and epitaxial silicon films for photovoltaic applications. Fundamental questions remain, however, about the gas-phase and surface-kinetic processes involved. To this end, the nature of the wire decomposition process has been studied in detail by use of mass spectrometry. Atomic silicon...
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Available online 23 January 2009
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Experiments and numerical simulations have been conducted to determine critical parameters for growth of polycrystalline silicon via hot-wire chemical vapor deposition. Reactor-scale simulations performed using the Direct Simulation Monte Carlo (DSMC) method have revealed a number of important phenomena such as a sharp drop of 1700 K in the gas temperature from the wire to substrate. The gas-ph...
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ژورنال
عنوان ژورنال: Thin Solid Films
سال: 2009
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.01.068